Method and structure for FinFET devices

ABSTRACT

A semiconductor device includes a substrate, an isolation structure over the substrate, and at least one semiconductor layer over the substrate. A first portion of the at least one semiconductor layer is over the isolation structure and a second portion of the at least one semiconductor layer is surrounded by the isolation structure. A doped material layer is between the isolation structure and the second portion of the at least one semiconductor layer.

This is a divisional application of U.S. patent application Ser. No.14/619,353, entitled “Method and Structure for FinFET Devices,” filedFeb. 11, 2015, herein incorporated by reference in its entirety.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experiencedexponential growth. Technological advances in IC materials and designhave produced generations of ICs where each generation has smaller andmore complex circuits than the previous generation. In the course of ICevolution, functional density (i.e., the number of interconnecteddevices per chip area) has generally increased while geometry size(i.e., the smallest component (or line) that can be created using afabrication process) has decreased. This scaling down process generallyprovides benefits by increasing production efficiency and loweringassociated costs. Such scaling down has also increased the complexity ofprocessing and manufacturing ICs.

For example, multi-gate field effect transistors (FETs) such as finfield effect transistors (FinFETs) have been developed for their highdrive currents with small footprints compared to traditional planarFETs. In one method, FinFETs are formed on bulk substrate for reducedmanufacturing cost. However, typical bulk FinFETs suffer a punch-throughissue where leakage currents may flow in a region not controlled by agate. To overcome the punch-through issue, conventional methods implantheavy impurities into regions between the fin channel and the bulksubstrate. These methods unavoidably implant impurities into the wholefin, adversely reducing the carrier mobility thereof. In addition,impurity implantation may also adversely affect channel strain of thefin.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detaileddescription when read with the accompanying figures. It is emphasizedthat, in accordance with the standard practice in the industry, variousfeatures are not drawn to scale and are used for illustration purposesonly. In fact, the dimensions of the various features may be arbitrarilyincreased or reduced for clarity of discussion.

FIGS. 1A, 1B, and 1C are perspective and cross-sectional views of asemiconductor device, according to various aspects of the presentdisclosure.

FIG. 2 shows a flow chart of a method of fabricating a semiconductordevice, according to various aspects of the present disclosure.

FIGS. 3A, 3B, 3C, 3D, 3E, 3F, 3G, 3H, 3I, 3J, 3K, 3L, 3M, 3N, 3O, 3P,3Q, and 3R are cross sectional views of forming a semiconductor deviceaccording to the method of FIG. 2, in accordance with some embodiments.

FIGS. 4A, 4B, 4C, 4D, 4E, 4F, 4G, 4H, 4I, 4J, 4K, 4L, 4M, 4N, 4O, and 4Pare cross sectional views of forming another semiconductor deviceaccording to the method of FIG. 2, in accordance with some embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

The present disclosure is generally related to semiconductor devices,and more particularly to semiconductor devices having multi-gate FETs,such as double gate FETs, tri-gate FETs, and FinFETs. It is an objectiveof the present disclosure to provide methods for and structures ofsemiconductor devices that effectively overcome punch-through issues inmulti-gate FETs while providing excellent carrier mobility and highshort channel effect control.

FIGS. 1A-1C show perspective and cross-sectional views of asemiconductor device 100 constructed according to various aspects of thepresent disclosure. As will be shown, the device 100 illustrates ap-type FinFET and an n-type FinFET in one region of a substrate. This isprovided for simplification and ease of understanding and does notnecessarily limit the embodiment to any number of devices, any number ofregions, or any configurations of regions. Furthermore, the FinFETdevice 100 may be an intermediate device fabricated during processing ofan integrated circuit (IC), or a portion thereof, that may comprisestatic random access memory (SRAM) and/or other logic circuits, passivecomponents such as resistors, capacitors, and inductors, and activecomponents such as p-type FETs, n-type FETs, double gate FETs, tri-gateFETs, FinFETs, metal-oxide semiconductor field effect transistors(MOSFET), complementary metal-oxide semiconductor (CMOS) transistors,bipolar transistors, high voltage transistors, high frequencytransistors, other memory cells, and combinations thereof.

Referring to FIG. 1A, the device 100 includes a substrate 102 and anisolation structure 106 over the substrate 102. The device 100 includesa p-type FinFET 100 a and an n-type FinFET 100 b formed over thesubstrate 102. The FinFETs 100 a and 100 b have similar structures andwill be described collectively below. The FinFET 100 a (100 b) includesa fin 104 a (104 b) projecting from the substrate 102 upwardly (alongthe “z” direction) through the isolation structure 106. The FinFET 100 a(100 b) further includes a gate structure 110 a (110 b) over theisolation structure 106 and engaging the fin 104 a (104 b) on threesides thereof (top surface and sidewalls). In some embodiments, the gatestructure 110 a (110 b) may engage the respective fins on only twosides, e.g., only the sidewalls of the fins. The FinFET 100 a (100 b)further includes a doped material layer 108 a (108 b) between the fin104 a (104 b) and the isolation structure 106. The various elements ofthe device 100 will be further described in the following sections.

The substrate 102 is a silicon substrate in the present embodiment.Alternatively, the substrate 102 may comprise another elementarysemiconductor, such as germanium; a compound semiconductor includingsilicon carbide, gallium arsenic, gallium phosphide, indium phosphide,indium arsenide, and/or indium antimonide; an alloy semiconductorincluding SiGe, GaAsP, AlInAs, AlGaAs, GaInAs, GaInP, and/or GaInAsP; orcombinations thereof.

In the present embodiment, the fins 104 a and 104 b are formed through avariety of processes including photolithography, etching, and epitaxialgrowth processes, which will be further described in details later.

The isolation structure 106 may be formed of silicon oxide, siliconnitride, silicon oxynitride, fluoride-doped silicate glass (FSG), alow-k dielectric material, and/or other suitable insulating material.The isolation structure 106 may be shallow trench isolation (STI)features. In an embodiment, the isolation structures 106 is formed byetching trenches in the substrate 102, e.g., as part of the fins 104 aand 104 b formation process. The trenches may then be filled withisolating material, followed by a chemical mechanical planarization(CMP) process. Other isolation structure such as field oxide, LOCalOxidation of Silicon (LOCOS), and/or other suitable structures arepossible. The isolation structure 106 may include a multi-layerstructure, for example, having one or more thermal oxide liner layers.

The fins, 104 a and 104 b, and the gate structures, 110 a and 110 b, arefurther illustrated in FIG. 1B, which is a cross-sectional view of thedevice 100 along the “1-1” line of FIG. 1A. Referring to FIG. 1B, thefin 104 a (104 b) includes three regions along the “y” direction: twosource/drain regions 114 a (114 b) and a channel region 112 a (112 b).The gate structure 110 a (110 b) includes a gate stack 116 a (116 b) anda spacer feature 118 a (118 b) on sidewalls of the gate stack 116 a (116b). In various embodiments, each of the gate stacks 116 a and 116 bincludes a multi-layer structure. In one example, each of them includesan interfacial layer and a poly-silicon layer. In another example, eachof them includes an interfacial layer, a high-k dielectric layer, abarrier layer, a work function metal layer, and a metal fill layer.Various other embodiments of the gate stacks 116 a and 116 b arepossible. The gate stacks 116 a and 116 b may be formed using either a“gate-first” or a “gate-last” method. In embodiments, the spacer feature118 a (118 b) includes a dielectric material, such as silicon nitride orsilicon oxynitride and is formed by one or more deposition and etchingprocesses. The gate structure 110 a (110 b) engages the fin 104 a (104b) at the channel region 112 a (112 b). In an exemplary mode ofoperation of the FinFET 100 a (100 b), currents may flow between the twosource/drain regions 114 a (114 b) under the control of the gatestructure 110 a (110 b) by applying a voltage thereto.

FIG. 1C is a cross-sectional view of the device 100 along the “2-2” lineof FIG. 1A. Referring to FIG. 1C, the fin 104 a (104 b) is divided intoat least two vertical portions (or sections) along the “z” direction,one above the isolation structure 106 and another one surrounded by theisolation structure 106. In the embodiment as shown, the fin 104 aincludes three vertical portions: 104 a-1, 104 a-2, and 104 a-3; and thefin 104 b includes three vertical portions: 104 b-1, 104 b-2, and 104b-3. Specifically the fin portions 104 a-3 and 104 b-3 are above theisolation structure 106, while the fin portions 104 a-2, 104 a-1, 104b-2, and 104 b-1 are surrounded by the isolation structure 106. In anembodiment, the fin portions 104 a-2 and 104 a-1 are merged into one. Inan embodiment, the fin portions 104 b-2 and 104 b-1 are merged into one.In various embodiments, the fins 104 a and 104 b may have the same ordifferent configurations along the “z” direction. For example, the fin104 a may include two vertical portions while the fin 104 b includesthree vertical portions. In various embodiments, only the fin portionsabove the isolation structure 106, such as the fin portions 104 a-3 and104 b-3, are under the direct control of the respective gate structures110 a and 110 b. In a conventional FinFET, currents might flow in finportions not under the direct control of a gate, causing punch-through.This is undesirable. The FinFETs 100 a and 100 b overcome such issue.

Still referring to FIG. 1C, the doped material layer 108 a and 108 b arelocated between the isolation structure 106 and the respective fins 104a and 104 b. In the embodiment as shown, the device 100 a is a p-typeFinFET. To further this embodiment, the doped material layer 108 a andthe fin portions 104 a-2 and 104 a-1 each include an n-type dopant, suchas phosphorous, that is opposite to the conductivity type of thesource/drain regions 114 a. The impurity level in the fin portions 104a-2 and 104 a-1 are sufficiently high so as to stop any punch-throughcurrents between the source/drain regions 114 a. To further thisembodiment, the fin portion 104 a-3 is tuned to have compressive strainfor enhancing carrier mobility in the channel region 112 a (FIG. 1B).

In the embodiment as shown in FIG. 1C, the device 100 b is an n-typeFinFET. To further this embodiment, the doped material layer 108 b andthe fin portions 104 b-2 and 104 b-1 each include a p-type dopant, suchas boron, that is opposite to the conductivity type of the source/drainregions 114 b. The impurity level in the fin portions 104 b-2 and 104b-1 are sufficiently high so as to stop any punch-through currentsbetween the source/drain regions 114 b. To further this embodiment, thefin portion 104 b-3 is tuned to have tensile strain for enhancingcarrier mobility in the channel region 112 b (FIG. 1B).

In various embodiments, the impurities in the fin portions 104 a-2, 104a-1, 104 b-2, and 104 b-1 are introduced by a solid phase diffusion(SPD) method, which will be described in greater details later. In theSPD method, impurities from the doped material layers 108 a and 108 bare diffused into the fin portions 104 a-2, 104 a-1, 104 b-2, and 104b-1 through an annealing process, keeping the fin portions 104 a-3 and104 b-3 substantially free of the respective impurities. As a result,the carrier mobility and the proper channel stress (either compressiveor tensile) in the fin portions 104 a-3 and 104 b-3 are advantageouslymaintained. This greatly enhances the electrical performance of theFinFETs 100 a and 100 b. A method of forming the device 100 will now bediscussed in conjunction with FIGS. 2-3R.

Referring now to FIG. 2, a flow chart of a method 200 is illustratedaccording to various aspects of the present disclosure in forming asemiconductor device, such as the semiconductor device 100 of FIGS.1A-1C. The method 200 is merely an example, and is not intended to limitthe present disclosure beyond what is explicitly recited in the claims.Additional operations can be provided before, during, and after themethod 200, and some operations described can be replaced, eliminated,or moved around for additional embodiments of the method. The method 200is described below in conjunction with FIGS. 3A-3R that illustratecross-sectional views of the semiconductor device 100 along the “2-2”line of FIG. 1A at various stages of the manufacturing.

At operation 202, the method 200 (FIG. 2) receives a substrate 102 withvarious structures formed therein and/or thereon. Referring to FIG. 3A,the device 100 includes a substrate 102 having two fins 120 a and 120 bprojecting upwardly from the substrate 102. The two fins 120 a and 120 bare in two regions of the device 100 where two FinFETs 100 a and 100 bare going to form. The device 100 further includes an isolationstructure 106 over the substrate 102 and separating the fins 120 a and120 b. In an embodiment, the two fins 104 a and 104 b are fabricatedusing suitable processes including photolithography and etchingprocesses. The photolithography process may include forming aphotoresist (or resist) layer overlying the substrate 102, exposing theresist to a pattern, performing post-exposure bake processes, anddeveloping the resist to form a resist pattern. The resist pattern isthen used for etching a hard mask layer to form patterned hard masks 122a and 122 b. Subsequently, the substrate 102 is etched using thepatterned hard masks 122 a and 122 b as an etch mask, leaving the fins120 a and 120 b on the substrate 102. The various etching processes caninclude dry etching, wet etching, reactive ion etching (RIE), and/orother suitable processes. After the fins 120 a and 120 b have beenfabricated, an isolating material is deposited over the substrate 102and fills the trenches. Thereafter, the isolating material is recessedto form the isolation structure 106. In an embodiment, the isolatingmaterial is recessed using a CMP process where the patterned hard masks122 a and 122 b acts as a CMP stop. In the present embodiment, the widthof the fins 120 a and 120 b are greater than the width of the fins 104 aand 104 b (FIG. 1C) for reasons discussed later. From a process point ofview, this advantageously enlarges the process window for fin formationphotolithography.

At operation 204, the method 200 (FIG. 2) etches the fin 120 a to form atrench 126 a. Referring to FIG. 3B, a masking element 124 is formed tocover the region for the FinFET 100 b while the region for the FinFET100 a is exposed. The masking element 124 may be formed by aphotolithography process discussed above. Then, one or more etchingprocesses are performed to selectively remove the hard mask 122 a andthe fin 120 a, resulting in the trench 126 a. The etching processes caninclude dry etching, wet etching, reactive ion etching (RIE), and/orother suitable processes. As shown in FIG. 3B, the trench 126 a issurrounded by the isolation structure 106 as trench sidewalls and thesubstrate 102 (or a stub of the fin 120 a) as a trench bottom. Thesidewalls and the bottom surface of the trench 126 a form a sidewallangle Θ_(trench-a). The trench 126 a has an opening width W_(trench-a).In various embodiments, the opening of the trench 126 a is wide enoughand the sidewalls of the trench 126 a are upright enough so that thesurfaces of the trench 126 a can be accessed for forming materiallayer(s) thereon. In an example, W_(trench-a) is greater than or equalto 7 nm and Θ_(trench-a) is greater than or equal to about 80 degrees.After the trench 126 a has been etched, the masking element 124 isremoved (FIG. 3C), for example, by a stripping, ashing, or othersuitable method. One or more cleaning processes may be performed toclean the trench 126 a and make it ready for subsequent processes.

At operation 206, the method 200 (FIG. 2) forms a doped material layer128 a on sidewalls of the trench 126 a. In an embodiment, the dopedmaterial layer 128 a includes an n-type dopant, such as phosphorous. Inan embodiment, the doped material layer 128 a is an n-type doped oxidelayer, such as phosphosilicate glass (PSG). The dopant concentration inthe material layer 128 a may range from about 1×10¹⁸ to about 3×10²².Operation 206 may involve multiple processes. In an embodiment, thedoped material layer 128 a is first deposited as a blanket layer overthe device 100 (FIG. 3D), covering the top surface of the isolationstructure 106, and the sidewalls and the bottom surface of the trench126 a. For example, the doped material layer 128 a may be depositedusing CVD or other suitable methods and may have a thickness about fewnanometers (e.g., ranging from about 1 nm to about 10 nm). After theblanket layer 128 a is formed, an etching process is performed to removethe doped material from the top surface of the isolation structure 106and the bottom surface of the trench 126 a. The doped material on thesidewalls of the trench 126 a substantially remains, as shown in FIG.3E. The etching process can be dry etching, RIE, or any otherdirectional (anisotropic) etching method. The opening of the trench 126a becomes smaller as a result of the formation of the doped materiallayer 128 a (W′_(trench-a)<W_(trench-a)).

At operation 208, the method 200 (FIG. 2) grows one or more epitaxiallayers in the trench 126 a. In the present embodiment, two layers ofepitaxy will be grown. In other embodiments, one layer or more than twolayers of epitaxy may be grown without departing from the inventivescope of the present disclosure. Referring to FIG. 3F, an epitaxiallayer 130 a is grown in the trench 126 a, filling a bottom portion ofthe trench 126 a. In an embodiment, the epitaxial layer 130 a may besilicon or a silicon alloy such as silicon germanium or silicon carbide.Referring to FIG. 3G, another epitaxial layer 132 a is grown in thetrench 126 a, interfacing with the epitaxial layer 130 a. In anembodiment, the epitaxial layer 132 a may be silicon or a silicon alloysuch as silicon germanium. Referring to FIG. 3H, a CMP process isperformed to remove excessive portion of the epitaxial layer 132 a,planarizing the top surface of the device 100.

In the present embodiment, the epitaxial layer 132 a is also referred toas the channel epitaxial layer 132 a because the channel region 112 a(FIG. 1B) of the FinFET 100 a will be formed in a top portion of theepitaxial layer 132 a. In the present embodiment, the channel epitaxiallayer 132 a is tuned to have compressive strain so as to enhance carriermobility in the p-type FinFET 100 a. Compressive strain may be createdby having a larger crystalline lattice constant in the epitaxial layer132 a than in the epitaxial layer 130 a. In one example, the epitaxiallayer 132 a is silicon germanium and the epitaxial layer 130 a issilicon. In another example, the epitaxial layer 132 a is silicon andthe epitaxial layer 130 a is silicon carbide. In yet another example,both the epitaxial layers 132 a and 130 a are silicon germanium but theepitaxial layer 132 a contains a higher ratio of germanium to siliconthan the epitaxial layer 130 a does. In the present embodiment, theepitaxial layer 130 a is also referred to as a strain relaxation buffer(SRB) layer because it is located between the strained channel epitaxiallayer 132 a and the substrate 102 and it helps create and maintain thestrain in the layer 132 a. In embodiments, the SRB layer 130 a may havea height of few nanometers to few microns (e.g. ranging from about 10 nmto about 3 μm). In various embodiments, the epitaxial layers 130 a and132 a may each be formed by one or more selective epitaxial growth (SEG)processes. In an embodiment, the SEG process is a low pressure chemicalvapor deposition (LPCVD) process using a silicon-based precursor gas.

At operation 210, the method 200 (FIG. 2) etches the fin 120 b to form atrench 126 b (FIGS. 3I and 3J). Operation 210 is similar to operation204 in many respects. Therefore, it is briefly described below for thesake of simplicity. Referring to FIG. 3I, a hard mask layer 134 isformed over the top surface of the device 100. A masking element 136,such as a patterned resist, is formed over the FinFET 100 a, coveringthe region for the FinFET 100 a. Referring to FIG. 3J, the device 100 isetched using the masking element 136 as an etch mask. The etchingprocess selectively removes a portion of the hard mask layer 134, thehard mask 122 b, and the fin 120 b, resulting in the trench 126 b. Aportion of the hard mask layer 134 remains over the FinFET 100 a as ahard mask 134 a. As shown in FIG. 3J, the trench 126 b is surrounded bythe isolation structure 106 as trench sidewalls and the substrate 102(or a stub of the fin 120 b) as a trench bottom. The sidewalls and thebottom surface of the trench 126 b form a sidewall angle Θ_(trench-b).The trench 126 b has an opening width W_(trench-b). In variousembodiments, the opening of the trench 126 b is wide enough and thesidewalls of the trench 126 b are upright enough so that the surfaces ofthe trench 126 b can be accessed for forming material layer(s) thereon.In an example, W_(trench-b) is greater than or equal to 7 nm andΘ_(trench-b) is greater than or equal to about 80 degrees.

At operation 212, the method 200 (FIG. 2) forms a doped material layer128 b on sidewalls of the trench 126 b. Operation 212 is similar tooperation 206 in many respects. Therefore, it is briefly described belowfor the sake of simplicity. Referring to FIG. 3K, the masking element136 has been removed and a blanket material layer 128 b is formed overthe device 100, particularly on the sidewalls of the trench 126 b. Inthe present embodiment, the doped material layer 128 b includes a p-typedopant, such as boron. The dopant concentration in the material layer128 b may range from about 1×10¹⁸ to about 3×10²². In an embodiment, thedoped material layer 128 b is a p-type doped oxide layer, such asborosilicate glass (BSG). The blanket doped material layer 128 b may beformed by a deposition method discussed with reference to FIG. 3D. Inembodiments, the doped material layer 128 b may have a thickness aboutfew nanometers (e.g., ranging from about 1 nm to about 10 nm). Referringto FIG. 3L, an anisotropic etching process is performed to remove thematerial layer 128 b from the top surface of the device 100 and from thebottom surface of the trench 126 b while the doped material layer 128 bon the sidewalls of the trench 126 b substantially remains. The openingof the trench 126 b becomes smaller as a result of the formation of thedoped material layer 128 b (W′_(trench-b)<W_(trench-b)).

At operation 214, the method 200 (FIG. 2) grows one or more epitaxiallayers in the trench 126 b. Operation 214 is similar to operation 208 inmany respects. Therefore, it is briefly described below for the sake ofsimplicity. In the present embodiment, two layers of epitaxy will begrown. In other embodiments, one layer or more than two layers ofepitaxy may be grown without departing from the inventive scope of thepresent disclosure. Referring to FIG. 3M, an epitaxial layer 130 b isgrown in the trench 126 b. Referring to FIG. 3N, an epitaxial layer 132b is grown in the trench 126 b, interfacing with the epitaxial layer 130b. Referring to FIG. 3O, the patterned hard mask 134 a is removed (e.g.by a selective etching process or a CMP process) and a CMP process isperformed to remove excessive material from the epitaxial layer 132 band to planarize a top surface 136 of the device 100.

In the present embodiment, the epitaxial layer 132 b is also referred toas the channel epitaxial layer 132 b and the epitaxial layer 130 b isalso referred to as the SRB layer 130 b. In the present embodiment, thechannel epitaxial layer 132 b is tuned to have tensile strain so as toenhance carrier mobility in the n-type FinFET 100 b. Tensile strain maybe created by having a smaller crystalline lattice constant in theepitaxial layer 132 b than in the epitaxial layer 130 b. In one example,the epitaxial layer 132 b is silicon and the epitaxial layer 130 b issilicon germanium. In another example, the epitaxial layer 132 b issilicon carbide and the epitaxial layer 130 b is silicon. In yet anotherexample, both the epitaxial layers 132 b and 130 b are silicon germaniumbut the epitaxial layer 132 b contains a lower ratio of germanium tosilicon than the epitaxial layer 130 b does. In embodiments, the SRBlayer 130 b may have a height of few nanometers to few microns (e.g.ranging from about 10 nm to about 3 μm).

At operation 216, the method 200 (FIG. 2) recesses the isolationstructure 106 and the doped material layers 128 a and 128 b. Referringto FIG. 3P, the isolation structure 106 is recessed to have a topsurface 138. As a result of operation 216, portions of the epitaxiallayers 132 a and 132 b are exposed. Specifically, a top portion of theepitaxial layer 132 a, 132 a-2, projects above the surface 138, while abottom portion, 132 a-1, is still surrounded by the isolation structure106 and the doped material layer 128 a. The epitaxial layer 132 b issimilarly exposed, with a top portion 132 b-2 above the surface 138 anda bottom portion 132 b-1 surrounded by the isolation structure 106 andthe doped material layer 128 b. In the present embodiment, the epitaxiallayers 130 a and 132 a collectively constitute the fin 104 a of FIG. 1C,while the epitaxial layers 130 b and 132 b collectively constitute thefin 104 b of FIG. 1C. Therefore, FIG. 3P is also annotated with 104a-1/2/3 and 104 b-1/2/3 to indicate matching parts. Even though notshown, in embodiments, the isolation structure 106 and the dopedmaterial layers 128 a and 128 b may be recessed such that the epitaxiallayer 132 a and 132 b are fully exposed.

At operation 218, the method 200 (FIG. 2) performs an annealing process140 to the device 100. Referring to FIG. 3Q, the annealing process 140drives the dopants from the doped material layers 128 a and 128 b intothe respective fin portions surrounded thereby. Therefore, it is alsoreferred to as a solid phase diffusion method. Specifically, the n-typedopants in the material layer 128 a are driven into the fin portions 104a-1 and 104 a-2, and the p-type dopants in the material layer 128 b aredriven into the fin portions 104 b-1 and 104 b-2. The dopant level inthe fin portions 104 a-1, 104 a-2, 104 b-1, and 104 b-2 can becontrolled by the annealing condition and the dopant level in therespective doped material layers 128 a and 128 b. The annealing process140 also activates the dopants in the respective fin portions. Invarious embodiments, the annealing process 140 may use rapid thermalannealing (RTA), flash annealing, sub-second annealing (SSA),micro-second annealing (uSSA), laser annealing, or other suitableannealing methods. In an example, the annealing process 140 is performedat a temperature greater than or equal to about 700 degrees Celsius andlower than about 1,300 degrees Celsius.

Referring to FIG. 3R, the fin portions 104 a-2, 104 a-1, 104 b-2, and104 b-1 are properly doped to act as punch-through stoppers for theFinFETs 100 a and 100 b. Because the fin portions 104 a-3 and 104 b-3are not surrounded by the doped material layers 128 a and 128 b, theirpurity remains substantially unchanged during the annealing process 140,providing desirable carrier mobility therein. This avoids the issueassociated with traditional impurity implantation methods where thewhole fin 104 a and 104 b are implanted with impurities. Furthermore,the strains (compressive or tensile) in the fin portion 104 a-3 and 104b-3 remain substantially unchanged during the annealing process 140,further enhancing the carrier mobility therein. Still referring to FIG.3R, the fin portions 104 a-1, 104 a-2, 104 b-1, and 104 b-2 have highlevels of dopant concentration, forming two super steep retrogradewells. Further, the fins 104 a and 104 b have smaller dimensions thanthe initial fins 120 a and 120 b due to the presence of the dopedmaterial layers 128 a and 128 b. Thus, the initial fins 120 a and 120 bcan be made larger than those in conventional FinFET fabricationmethods, thereby enhancing the process window of the present disclosure.

At operation 220, the method 200 (FIG. 2) performs further processes tocomplete the fabrication of the FinFETs 100 a and 100 b. In anembodiment, operation 220 forms the gate structures 110 a and 110 b(FIGS. 1A and 1B) using either a “gate-first” or a “gate-last” process.Further, operation 220 may form epitaxial source/drain features in thesource/drain regions 114 a and 114 b (FIG. 1B) and may form aninter-layer dielectric (ILD) layer over the isolation structure 106, thefins 104 a and 104 b, and the gate structures 110 a and 110 b. Further,operation 220 may form various conductive features, such as contacts,vias, and interconnects, so as to connect the FinFETs 100 a and 100 b toother portions of the device 100 to form a complete integrated circuit.

FIGS. 4A-4P illustrate cross-sectional views of a semiconductor device300 formed with another embodiment of the method 200. The semiconductordevice 300 is similar to the semiconductor device 100. Therefore,reference numerals for the device 100 are repeated to show the same orsimilar features in the device 300. Furthermore, some descriptions ofthe device 300 are abbreviated or omitted by referring to thedescriptions of the device 100 for the sake of simplicity.

At operation 202, the method 200 (FIG. 2) receives the device 300 asshown in FIG. 4A. Referring to FIG. 4A, the device 300 includes asubstrate 102, two fins 120 a and 120 b, an isolation structure 106, andpatterned hard masks 122 a and 122 b. These features are the same orsimilar to those in FIG. 3A.

At operation 204, the method 200 (FIG. 2) etches the fin 120 a to form atrench 126 a. Referring to FIG. 4B, a masking element 124 is formed tocover the region for the FinFET 100 b, and the trench 126 a is formed byone or more etching processes. The trench 126 a has an opening widthW_(trench-a). The sidewalls and the bottom surface of the trench 126 aform a sidewall angle Θ_(trench-a). The materials and processes forforming the masking element 124 and the trench 126 a are the same orsimilar to those described with reference to FIG. 3B. Referring to FIG.4C, the masking element 124 is removed, for example, by a stripping,ashing, or other suitable method. One or more cleaning processes may beperformed to clean the trench 126 a and make it ready for subsequentprocesses.

At operation 206, the method 200 (FIG. 2) forms a doped material layer128 c on the sidewalls of the trench 126 a. Referring to FIG. 4D, in thepresent embodiment, the doped material layer 128 c is formed by plasmadoping an n-type dopant into the isolation structure 106, including thesidewalls of the trench 126 a. The plasma doping process uses extremelyhigh dopant concentration so that the doped layer 128 c can be used as asolid phase diffusion layer in a later operation. The doping process isconformal, i.e., the various surfaces of the device 300 are nearuniformly doped. As illustrated in FIG. 4D, the top surface of theisolation structure 106 and the bottom surface of the trench 126 a arealso doped by the same process. In embodiments, these doped areas do notaffect the device's performance and therefore are not specificallyremoved at this stage. The dimensions of the trench 126 a remainsubstantially the same before and after the doping process, i.e.,W′_(trench-a) is about the same as W_(trench-a). Essentially, theoperation 206 turns the sidewalls of the trench 126 a into the dopedmaterial layer 128 c.

At operation 208, the method 200 (FIG. 2) grows one or more epitaxiallayers in the trench 126 a. FIG. 4E shows that an epitaxial layer 130 ais grown in the trench 126 a. Even though the bottom of the trench 126 ais doped, its crystalline structure remains the same and still supportsthe growth of the epitaxial layer 130 a. FIG. 4F shows that an epitaxiallayer 132 a is grown in the trench 126 a over the epitaxial layer 130 a.FIG. 4G shows that a CMP process is performed to remove excessiveportions of the epitaxial layer 132 a. These operations are similar tothose described with reference to FIGS. 3F, 3G, and 3H.

At operation 210, the method 200 (FIG. 2) etches the fin 120 b to form atrench 126 b (FIGS. 4H and 4I). FIG. 4H shows that a hard mask layer 134is formed over the top surface of the device 100 and a masking element136 is formed over the FinFET 100 a. FIG. 4I shows that the hard masklayer 134 is patterned, resulting in a patterned hard mask 134 a, andthe trench 126 b is formed by one or more etching processes. Thesidewalls and the bottom surface of the trench 126 b form a sidewallangle Θ_(trench-b). The trench 126 b has an opening width W_(trench-b).These operations are similar to those described with reference to FIGS.3I and 3J.

At operation 212, the method 200 (FIG. 2) forms a doped material layer128 d on the sidewalls of the trench 126 b. Referring to FIG. 4J, in thepresent embodiment, the doped material layer 128 d is formed by plasmadoping a p-type dopant into the isolation structure 106, including thesidewalls of the trench 126 b. This process is similar to operation 206but for different dopant species and their appropriate dopantconcentration levels. The dimensions of the trench 126 b remainsubstantially the same before and after the doping process, i.e.,W′_(trench-b) is about the same as W_(trench-b).

At operation 214, the method 200 (FIG. 2) grows one or more epitaxiallayers in the trench 126 b. FIG. 4K shows that an epitaxial layer 130 bis grown in the trench 126 b. FIG. 4L shows that an epitaxial layer 132b is grown in the trench 126 b over the epitaxial layer 130 b. FIG. 4Mshows that the patterned hard mask 134 a is removed and a CMP process isperformed to remove excessive portions of the epitaxial layer 132 b andto planarize a top surface 136 of the device 300. These operations aresimilar to those described with reference to FIGS. 3M, 3N, and 3O.

At operation 216, the method 200 (FIG. 2) recesses the isolationstructure 106 and the doped material layers 128 a and 128 b. FIG. 4Nshows that top portions of the epitaxial layers 132 a and 132 b areexposed. In embodiments, the operation 216 may fully expose theepitaxial layers 132 a and 132 b. The device 300 (FIG. 4N) issubstantially similar to the device 100 (FIG. 3P). One difference isthat the doped material layers 128 a and 128 b may be formed bydeposition methods while the doped material layers 128 c and 128 d maybe formed by plasma doping methods.

At operation 218, the method 200 (FIG. 2) performs an annealing process140 to the device 300. Referring to FIG. 4O, the annealing process 140drives the dopants from the doped material layers 128 c and 128 d intothe respective fin portions surrounded thereby. The annealing process140 is similar to what is described with reference to FIG. 3Q. Referringto FIG. 4P, the fin portions 104 a-2, 104 a-1, 104 b-2, and 104 b-1 areproperly doped to act as punch-through stoppers for the FinFETs 100 aand 100 b. The strains (compressive or tensile) in the fin portion 104a-3 and 104 b-3 remain substantially unchanged during the annealingprocess 140, enhancing the carrier mobility therein. The fins 104 a and104 b have about the same dimensions as the initial fins 120 a and 120 b(FIG. 4A) because the doped material layers 128 c and 128 d are formedby plasma doping the isolation structure 106.

At operation 220, the method 200 (FIG. 2) performs further processes tocomplete the fabrication of the FinFETs 100 a and 100 b for the device300.

Although not intended to be limiting, one or more embodiments of thepresent disclosure provide many benefits to a semiconductor device andthe formation thereof. For example, embodiments of the presentdisclosure provide structures of and methods for bulk FinFETs havingpunch-through stoppers underneath channel fins. The punch-throughstoppers are formed using a solid phase diffusion (SPD) method, whichpreserves purity and stress in the channel fins. The dopant level in thepunch-through stoppers can be flexibly adjusted by controlling thedopant level of the solid doping source and the annealing conditions ofthe SPD process. Another benefit of some embodiments of the presentdisclosure is that initial fins can be formed with larger dimensionsthan the final fins, which enlarges process window. Various embodimentsof the present disclosure can be implemented with low complexity and lowmanufacturing cost.

In one exemplary aspect, the present disclosure is directed to a methodof forming a semiconductor device. The method includes receiving asubstrate having a fin projecting through an isolation structure overthe substrate, etching a portion of the fin, resulting in a trench. Themethod further includes forming a doped material layer on sidewalls ofthe trench and growing at least one epitaxial layer in the trench. Themethod further includes recessing the isolation structure and the dopedmaterial layer, leaving a first portion of the at least one epitaxiallayer over the isolation structure and a second portion of the at leastone epitaxial layer surrounded by the doped material layer and theisolation structure. The method further includes performing an annealingprocess, thereby driving dopants from the doped material layer into thesecond portion of the at least one epitaxial layer.

In another exemplary aspect, the present disclosure is directed to amethod of forming a semiconductor device. The method includes receivinga substrate having first and second fins projecting through an isolationstructure over the substrate. The method further includes etching aportion of the first fin, resulting in a first trench; forming a firstmaterial layer on sidewalls of the first trench, the first materiallayer having an n-type dopant; and growing a first epitaxial layer overa first strain relaxation buffer (SRB) layer in the first trench. Themethod further includes etching a portion of the second fin, resultingin a second trench; forming a second material layer on sidewalls of thesecond trench, the second material layer having a p-type dopant; andgrowing a second epitaxial layer over a second SRB layer in the secondtrench. The method further includes recessing the isolation structureand the first and second material layers, resulting in a first portionof the first epitaxial layer and a first portion of the second epitaxiallayer over the isolation structure. The method further includesperforming an annealing process, thereby driving the n-type dopant intothe first SRB layer and driving the p-type dopant into the second SRBlayer.

In another exemplary aspect, the present disclosure is directed to asemiconductor device. The semiconductor device includes a substrate; anisolation structure over the substrate; and at least one epitaxial layerover the substrate, wherein a first portion of the at least oneepitaxial layer is over the isolation structure and a second portion ofthe at least one epitaxial layer is surrounded by the isolationstructure. The semiconductor device further includes a doped materiallayer between the isolation structure and the second portion of the atleast one epitaxial layer. The semiconductor device further includes agate structure over the isolation structure and engaging the firstportion of the at least one epitaxial layer.

The foregoing outlines features of several embodiments so that those ofordinary skill in the art may better understand the aspects of thepresent disclosure. Those of ordinary skill in the art should appreciatethat they may readily use the present disclosure as a basis fordesigning or modifying other processes and structures for carrying outthe same purposes and/or achieving the same advantages of theembodiments introduced herein. Those of ordinary skill in the art shouldalso realize that such equivalent constructions do not depart from thespirit and scope of the present disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the present disclosure.

What is claimed is:
 1. A semiconductor device, comprising: a substrate;an isolation structure over the substrate; at least one semiconductorlayer over the substrate, wherein a first portion of the at least onesemiconductor layer is over the isolation structure and a second portionof the at least one semiconductor layer is surrounded by the isolationstructure; and a doped material layer between the isolation structureand the second portion of the at least one semiconductor layer.
 2. Thesemiconductor device of claim 1, further comprising: a gate structureover the isolation structure and engaging the first portion of the atleast one semiconductor layer.
 3. The semiconductor device of claim 1,wherein: the first portion of the at least one semiconductor layerprovides a channel for an n-type field effect transistor; and the dopedmaterial layer and the second portion of the at least one semiconductorlayer include a same p-type dopant.
 4. The semiconductor device of claim3, wherein the doped material layer includes borosilicate glass (BSG).5. The semiconductor device of claim 3, wherein the first portion of theat least one semiconductor layer has a smaller crystalline latticeconstant than the second portion of the at least one semiconductorlayer.
 6. The semiconductor device of claim 1, wherein: the firstportion of the at least one semiconductor layer provides a channel for ap-type field effect transistor; and the doped material layer and thesecond portion of the at least one semiconductor layer include a samen-type dopant.
 7. The semiconductor device of claim 6, wherein the dopedmaterial layer includes phosphosilicate glass (PSG).
 8. Thesemiconductor device of claim 6, wherein the first portion of the atleast one semiconductor layer has a larger crystalline lattice constantthan the second portion of the at least one semiconductor layer.
 9. Thesemiconductor device of claim 1, wherein an angle formed between asidewall of the doped material layer and a bottom surface of the secondportion of the at least one semiconductor layer is greater than or equalto 80 degrees.
 10. The semiconductor device of claim 1, wherein a bottomsurface of the second portion of the at least one semiconductor layerphysically contacts the substrate.
 11. The semiconductor device of claim1, wherein a portion of the doped material layer separates the secondportion of the at least one semiconductor layer from the substrate. 12.The semiconductor device of claim 1, wherein the second portion of theat least one semiconductor layer includes an upper portion and a lowerportion, and wherein the upper portion includes a different materialthan the lower portion.
 13. A semiconductor device, comprising: asubstrate; an isolation feature over the substrate; a firstsemiconductor layer over the substrate and surrounded by the isolationfeature; a second semiconductor layer over the first semiconductorlayer, wherein a top portion of the second semiconductor layer is abovethe isolation feature; a doped material layer between the isolationfeature and the first semiconductor layer; and a gate structure over thetop portion of the second semiconductor layer.
 14. The semiconductordevice of claim 13, wherein: the second semiconductor layer providescompressive strain; and the doped material layer and the firstsemiconductor layer include an n-type dopant.
 15. The semiconductordevice of claim 13, wherein: the second semiconductor layer providestensile strain; and the doped material layer and the first semiconductorlayer include a p-type dopant.
 16. The semiconductor device of claim 13,wherein the doped material layer includes one of: phosphosilicate glass(PSG) and borosilicate glass (BSG).
 17. The semiconductor device ofclaim 13, wherein a bottom surface of the first semiconductor layer isseparated from the substrate by a portion of the doped material layer.18. A FinFET device, comprising: a substrate; an isolation feature overthe substrate; a first strain relaxation buffer (SRB) layer over thesubstrate and surrounded by the isolation feature, the first SRB layerhaving an n-type dopant; a first epitaxial layer over the first SRBlayer, an upper portion of the first epitaxial layer being above theisolation feature, the first epitaxial layer having compressive strain;a first material layer between the isolation feature and the first SRBlayer, the first material layer having the n-type dopant; a first gatestructure over the upper portion of the first epitaxial layer; a secondstrain relaxation buffer (SRB) layer over the substrate and surroundedby the isolation feature, the second SRB layer having a p-type dopant; asecond epitaxial layer over the second SRB layer, an upper portion ofthe second epitaxial layer being above the isolation feature, the secondepitaxial layer having tensile strain; a second material layer betweenthe isolation feature and the second SRB layer, the second materiallayer having the p-type dopant; and a second gate structure over theupper portion of the second epitaxial layer.
 19. The FinFET device ofclaim 18, wherein: a lower portion of the first epitaxial layer issurrounded by the first material layer; and a lower portion of thesecond epitaxial layer is surrounded by the second material layer. 20.The FinFET device of claim 18, wherein: the first material layerincludes phosphosilicate glass (PSG); and the second material layerincludes borosilicate glass (BSG).